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| Silicon MOS FETs (Small Signal) 2SK615 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance q High-speed switching q Allowing to be driven directly by CMOS and TTL q M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.5 0.4 6.90.1 1.5 R0.9 R0.9 2.40.2 2.00.2 3.50.1 2.50.1 1.0 1.0 1.00.1 R 0. 7 0.85 s Absolute Maximum Ratings (Ta = 25C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature * 0.550.1 0.450.05 1.250.05 Symbol VDS VGSO ID IDP PD * Ratings 80 20 0.5 1 1 150 -55 to +150 Unit V V A A W C C 2.5 2.5 3 2 1 1: Gate 2: Drain 3: Source EIAJ: SC-71 M Type Mold Package Tch Tstg PC board: Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.7mm. s Electrical Characteristics (Ta = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Coss ton*1, 2 toff *1, 2 *1 Conditions VDS = 60V, VGS = 0 VGS = 20V, VDS = 0 IDS = 100A, VGS = 0 ID = 1mA, VDS = VGS ID = 0.5A, VGS = 10V ID = 0.2A, VDS = 15V, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz min typ max 10 0.1 4.10.2 4.50.1 Unit A A V 80 1.5 2 300 45 30 8 15 20 3.5 4 V mS pF pF pF ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time *1 *2 Pulse measurement ton, toff measurement circuit Vout Vin = 10V 68 VDD = 30V Vout Vin 10% Vin 10% 90% 90% V t = 1S f = 1MHZ out 50 ton toff 1 Silicon MOS FETs (Small Signal) PD Ta 1.6 1.2 Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.7mm. Ta=25C 1.0 VGS=5.5V 1.0 2SK615 ID VDS 1.2 VDS=10V Ta=25C ID VGS Allowable power dissipation PD (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 Drain current ID (A) 0.8 5V Drain current ID (A) 0.8 0.6 4.5V 0.6 0.4 4V 0.4 3.5V 0.2 3V 0 60 80 100 120 140 160 0 2 4 6 8 10 0 0 2 4 6 8 10 0.2 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs | VGS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 600 Ciss, Coss, Crss VDS VDS=15V f=1kHz Ta=25C VGS=0 f=1MHz Ta=25C RDS(on) VGS Drain to source ON-resistance RDS(on) () 6 ID=500mA 5 120 Forward transfer admittance |Yfs| (mS) 500 100 400 80 4 300 60 3 Ta=75C 2 25C -25C 200 40 Ciss 100 20 Coss 0 1 3 10 30 Crss 100 300 1000 1 0 0 1 2 3 4 5 6 0 0 4 8 12 16 20 Gate to source voltage VGS (V) Drain to source voltage VDS (V) Gate to source voltage VGS (V) RDS(on) Ta Drain to source ON-resistance RDS(on) () 6 ID=500mA 5 4 VGS=5V 3 10V 2 1 0 -50 -25 0 25 50 75 Ambient temperature Ta (C) 2 |
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